| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus that forms transistors, having a different structure on the same semiconductor substrate by the same process.SOLUTION: A method of manufacturing a semiconductor apparatus includes the following steps of: forming first and second gate electrodes 40 and 41 on a semiconductor substrate; forming a first insulating layer 122, on a sidewall surface of the first gate electrode and forming an epitaxial growing layer 9a, on the semiconductor substrate on both sides in a gate width direction of the second gate electrode; forming a second insulating layer on a side wall surface of the second gate electrode; forming a third insulating layer so as to cover the first and second insulating layers; removing the third insulating layer covering the second insulating layer; diffusing impurities to the semiconductor substrate on both sides, in the gate width direction of the first gate electrode and to the epitaxial growing layer, respectively, to form first and second impurity diffusion regions 6 and 8; and connecting contact plugs 12 and 15 to the first and second impurity diffusion regions. |
