| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high avalanche resistance.SOLUTION: The semiconductor device includes a semiconductor substrate of the first conductivity-type; a first semiconductor layer of the first conductivity formed on the semiconductor substrate; a second semiconductor layer of the second conductivity-type selectively formed on the first semiconductor layer; a plurality of source regions of the first conductivity selectively formed at the surface layer part of the second semiconductor layer; carrier extraction regions of the second conductivity formed between the source regions; and a gate electrode, extending in a first direction where the source regions and the carrier extraction regions are arrayed alternately and controlling a current route between the source region and the first semiconductor layer. An element region with the source and carrier extraction regions provided therein includes a part, wherein the ratio of an area occupied by the carrier extraction regions is large and a part, wherein the ratio of the area occupied by the carrier extraction regions is small. |
