| 摘要 |
PROBLEM TO BE SOLVED: To satisfy the need for enhancing the throughput while attaining more stable process control.SOLUTION: An apparatus 10 of producing a semiconductor, which forms a thin film on a semiconductor substrate 11 by supplying material gas and reaction gas alternately, includes a reaction chamber 12 which is exhausted while containing the semiconductor substrate 11, a material gas supply pipe 35 for supplying material gas to the reaction chamber 12, a valve 23 which adjusts the opening in order to adjust the amount of exhaust gas from the reaction chamber 12, a pressure gauge P2 provided in the material gas supply pipe 35 in order to detect the supply pressure of material gas, and a control unit 41 which controls the opening of the valve 23 based on the pressure detected by the pressure gauge P2 when the material gas is supplied to the reaction chamber 12. |
