PLASMA ETCHING METHOD, AND PLASMA ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching apparatus of high speed/high yield.SOLUTION: A material to be etched 1 is placed in a reaction container 2 and etched by introducing the etching gas and generating plasma 6 between the material to be etched 1 and an electrode 4 for generating plasma. The material to be etched 1 is composed of a permeable substance having voids inside.