| 摘要 |
PROBLEM TO BE SOLVED: To efficiently carry out etching of the surface of a processed object in a short time.SOLUTION: Gas cluster containing reactive gas to be a radical in reaction with ultraviolet rays is generated by a gas cluster generating part 16. A gas cluster ion beam irradiation part 20 ionizes and accelerated the gas cluster generated, and gas cluster ion beams G are irradiated on the surface of a substrate W. A light-irradiating part 30 irradiates ultraviolet rays L on the surface of the substrate W. Then, reactive gas existing on the surface of the substrate W becomes radical by irradiation of the ultraviolet rays L, and, by the radical, the surface of the substrate W is etched. |
