METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS

摘要

PURPOSE: A method for manufacturing an asymmetric field-effect transistor(FET) is provided to prevent photo-resist bridging and scumming phenomena by maintaining a space between a photo-resist and a FET gate without a photo-resist opening. CONSTITUTION: A semiconductor substrate(101) is prepared. The first gate conductor and the second gate conductor of transistors are formed on the upper side of the substrate. A gate insulating layer(201) is formed on the upper side of the substrate. A gate conductive layer(301) is formed on the upper side of the gate insulating layer. A hard mask layer(401) is formed on the upper side of the gate conductive layer. A photo-resist pattern(502) is formed on the upper side of the hard mask layer.