| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reliably suppressing a leakage current and involving a logic product such as a memory cell-built-in micro computer or the like, and to provide a method of manufacturing the same.SOLUTION: A gate electrode 13b of a transistor T1 of a logic part is formed in a logic region RL. A sidewall of the gate electrode 13b is oxidized by dry oxidization to form a first gate bird's beak 17 between the gate electrode 13b and a semiconductor substrate 1. Then, a floating gate electrode 7a or the like of a transistor T2 of a flash memory cell is formed on a surface of a memory cell region RM. A sidewall of the floating gate electrode 7a is oxidized by ISSG (In-Situ Steam Generation) oxidization to form a second gate bird's beak between the floating gate electrode 7a and the semiconductor substrate 1. |
