| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM cell which improves DRAM cell density, simplifies a manufacturing process, and reduces a refresh rate.SOLUTION: The DRAM cell is equipped with: a substrate 100 composed of a semiconductor material and having a main surface 102; a transistor 120 formed on the main surface 102; and a magnetic capacitor 140 formed in a metal layer provided on the upper side of the transistor 120. The magnetic capacitor 140 has: a first magnetic layer 142; a dielectric layer 144 formed on the first magnetic layer 142; and a second magnetic layer 146 formed on the dielectric layer 144. The dielectric layer 144 consists of a non-conductive material, and the first magnetic layer 142 and the second magnetic layer 146 consist of an alloy of CoNiFe. |
