| 摘要 |
The invention relates to a thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of semiconductor structural elements that are arranged thereon at a distance from each other, are designed alternately as p-conducting (4) and n-conducting semiconductor structural elements (5), and are connected to each other in an electrically conducting manner in a series circuit alternately at two opposite ends of the respective semiconductor structural elements by means of conducting structures in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conducting structures or that a voltage difference present between the conducting structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first bounding surface between a first and a second silicon layer, the lattice structures of which are considered to be ideal, are rotated relative to each other by an angle of rotation about a first axis standing perpendicular to the substrate surface, and are tilted by a tilt angle about a second axis lying parallel to the substrate surface in such a way that a dislocation network is present in the area of the bounding surface. |
