MEMORY DEVICE COMPRISING A SENSE AMPLIFIER COMPENSATING AN OFFSET VOLTAGE AND A METHOD THEREOF

摘要

PURPOSE: A memory device comprising a sense amplifier compensating an offset voltage and a method thereof are provided to prevent the malfunction of a sense amp by performing a pull-up or pull-down operation through a compensated offset voltage. CONSTITUTION: A latch unit amplifies a sensing voltage from a memory cell array through one side node connected to a bit line. An offset voltage compensation unit(110) supplies a compensated offset voltage to the other side node of a latch unit. The latch unit receives a bit line precharge voltage through one side node of the latch unit in the precharge operation. The offset voltage compensation unit supplies the compensated offset voltage to one side node after the precharge operation.