| 摘要 |
PURPOSE: A single gate structure semiconductor memory device and a memory device array thereof are provided to simplify a peripheral circuit in order to drive a semiconductor memory cell by stably executing a reading process in a low voltage state. CONSTITUTION: A first conductive well(105) and a second conductive well(110) are formed on the upper part of a semiconductor substrate(100). A first gate(145) and a second gate(155) are formed on the first conductive well and the second conductive well. A second conductive type first ion injection region(120) is formed in the first conductive well in one side of the first gate. A second conductive type second ion injection region(125) is formed in the first conductive well in the other side of the first gate. A first conductive type first ion injection region(130) is formed in the second conductive well in one side of the second gate. A first conductive type second ion injection region(135) is formed in the second conductive well in the other side of the second gate. |
