METHOD OF FORMING BIT LINE OF SEMICONDUCTOR DEVICE AND MASK FOR FORMING BIT LINE

摘要

PURPOSE: A bit line forming method and a mask are provided to prevent a SAC fail when a storage electrode contact is formed by maintaining the line width difference between a bit line cell and a bit line contact and reducing a DOF margin. CONSTITUTION: A mask for the formation of a bit line comprises a line and space-shaped first mask pattern(40) and a pad-shaped second mask pattern(50). The mask pattern is formed by separately forming the two mask patterns. The arrangement of the two mask patterns are located in a location in which the second mask pattern is overlapped with the first mask pattern. The first mask pattern in a bit line cell region and the second mask pattern in a bit line contact region are separately formed.