| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent a short between a storage electrode contact and a bit line contact by easily forming the bit line contact with a small width. CONSTITUTION: A semiconductor substrate(10) comprises a buried gate(16). A line type conductive layer is formed on the semiconductor substrate to expose the upper side of the buried gate. A first photoresist pattern is formed on the conductive layer. The conductive layer is etched by using the first photoresist pattern as an etching mask. A first insulation layer is buried in the etched conductive layer. A bit line passes through the center of an active region in a vertical direction to a major axis of the buried gate.
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