| 摘要 |
PURPOSE: A pattern structure and a method thereof are provided to easily check a defect due to a loading effect by executing an electrical test after forming a pattern in order to check the change of an electrical property. CONSTITUTION: A first pad(10) is made of a rectangular-shaped metal plate. A second pad(20) is arranged on the upper side of the first pad. A third pad(30) is arranged in the right side of the second pad. A fourth pad(40) is arranged in the lower side of the third pad. The second pad, the third pad, and the fourth pad are made of the rectangular-shaped metal plate. The four terminals of a MOS transistor pattern(50) is connected to the first pad or the fourth pad.
|
