| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor epitaxial wafer of high quality, by suppressing adherence of foreign particles on an epitaxial wafer thereby with less surface defects.SOLUTION: The manufacturing method of an epitaxial wafer for transistors relates to a manufacturing method for a group III-V compound semiconductor epitaxial wafer by using a chemical vapor deposition method. In a growth chamber, in which a plurality of substrates 1 are installed a temperature gradient where the temperature becomes high, starting from the inner peripheral side toward the outer peripheral side in a substrate susceptor is provided by a heating zone heater 11 which is divided concentrically, and a Group-III material, Group-V material, dopant material, and diluting gas are supplied on the substrate heated in the growth chamber for growth of a Group III-V compound semiconductor layer. |
