| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME |
| 摘要 |
<p>Disclosed is a semiconductor device (100) which comprises a substrate (101), a high dielectric gate insulating film (109) provided on the substrate (101), and a metal gate electrode (110) provided on the substrate (101) with the high dielectric gate insulating film (109) disposed therebetween. In the semiconductor device (100) including such a structure, halogen is segregated to the metal gate electrode (110) side of the interface between the high dielectric gate insulating film (109) and the metal gate electrode (110).</p> |
| 申请公布号 |
WO2011001558(A1) |
申请公布日期 |
2011.01.06 |
| 申请号 |
WO2010JP01001 |
申请日期 |
2010.02.17 |
| 申请人 |
PANASONIC CORPORATION;SUZUKI, JUN;NAKAGAWA, HIROSHI |
发明人 |
SUZUKI, JUN;NAKAGAWA, HIROSHI |
| 分类号 |
H01L21/336;H01L21/28;H01L21/285;H01L21/8238;H01L27/092;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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