CU-GA TARGET AND METHOD FOR PRODUCING SAME

摘要

Disclosed is a sintered Cu-Ga alloy sputtering target which is characterized by being composed of a sintered Cu-Ga alloy that has a Ga concentration of 20-60 at%, a relative density of not less than 97%, an average particle diameter of 5-30 µm, and a metal impurity content of less than 10 ppm. For obtaining the sintered Cu-Ga alloy sputtering target, the metal impurity concentration in the starting material is decreased and entrance of metal impurities from metal impurity producing materials is prevented during the production process by a powder method. Consequently, the Cu-Ga target has high density and low metal impurity concentration. Also disclosed is a low-cost method for producing the Cu-Ga target.