发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING THE SAME |
摘要 |
PURPOSE: A semiconductor memory device and a method for reading the same are provided to read accurate data by outputting data stored in a first latch or a third latch as even page data. CONSTITUTION: A memory cell array(100) includes an even page cell group and an odd page cell group. A page buffer(200) reads and stores the memory cell data of the odd page cell group and the even page cell group. The page buffer includes a first latch(220) in which the first even page data of the even page cell group is stored. The paper buffer includes a second latch(230) in which the odd page data of the odd page cell group is stored. The paper buffer includes a third latch(240) in which the second even page data of the even page cell group is stored.
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申请公布号 |
KR20110001059(A) |
申请公布日期 |
2011.01.06 |
申请号 |
KR20090058450 |
申请日期 |
2009.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM, KYU HEE;CHANG, SEUNG HO;PARK, SEONG JE |
分类号 |
G11C16/26;G11C16/06;G11C16/34 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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