发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP, AND SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To aim at gaining both of suppression of a decrease in dicing properties and that of an increase of chipping of semiconductor wafers in dicing.SOLUTION: In the semiconductor wafer 1, a plurality of wiring layers are formed, a plurality of chip constitution sections 2 that become semiconductor chips including a portion of the plurality of respective wiring layers are formed, and the mutually adjacent chip constitution sections 2 are connected mutually and electrically via connection wiring 3 included in any one of the wiring layers. A dummy metal pattern 6 made of a plurality of dummy metals 5 is formed only at an arrangement region of the connection wiring 3 or within a range corresponding to an area near the arrangement region thereof in at least one wiring layer of the upper and lower layers of the connection wiring 3 among the plurality of wiring layers. The chip constitution sections 2 are mutually separated to form a semiconductor chip by cutting the semiconductor wafer 1 along a scribe line 4 extended to cross the connection wiring 3 between the mutually adjacent chip constitution sections 2. |
申请公布号 |
JP2011003675(A) |
申请公布日期 |
2011.01.06 |
申请号 |
JP20090144647 |
申请日期 |
2009.06.17 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
UCHIDA SHINICHI;KAWASHIMA YOSHITSUGU;ISE HIROSHI |
分类号 |
H01L21/301;H01L21/3205;H01L21/66;H01L23/52 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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