| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate processing method forming through-holes while suppressing horizontal spreading.SOLUTION: The silicon substrate processing method of forming the through-holes 8 in the silicon substrate 1 includes steps of: (1) forming an etching mask layer 5 having openings on the back of the silicon substrate; (2) forming non-through-holes 7 in the silicon substrate through the openings; (3) forming the through-holes by performing crystalline anisotropic etching using an etching liquid, having a (100) surface etching rate faster than a (110) surface etching rate, from the back of the silicon substrate where the non-through-holes are formed. |
