| 摘要 |
PROBLEM TO BE SOLVED: To solve such problems that, in Si-FRD, reverse recovery time trr, a time required for emitting stored charge amount Qrr, is long, and in order to resolve the problem, forward voltage VF becomes high, and in Si-SBD, as the characteristics of a device itself, reverse recovery time is short, but in order to obtain the device of high breakdown voltage, the forward voltage VF becomes very large, namely, both the Si-FRD and the Si-SBD have trade-off relation with respect to VF-trr characteristics, while in SiC-SBD, since the forward voltage VF is low, and the reverse recovery time trr is also short, VF-trr characteristics can be improved, but the price of the SiC-SBD is very expensive.SOLUTION: A semiconductor device is provided, in which an anode of the Si-FRD is connected to a cathode of the Si-SBD in series. The charge amount which can be accumulated in junction capacity of the Si-SBD is equal to or higher than the charge amount in which the Si-FRD generates at the time of reverse recovery. The Si-SBD makes the breakdown voltage thereof lower than that of the S-FRD. |
