An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
申请公布号
WO2011002046(A1)
申请公布日期
2011.01.06
申请号
WO2010JP61224
申请日期
2010.06.24
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SASAKI, TOSHINARI;SAKATA, JUNICHIRO;OHARA, HIROKI;YAMAZAKI, SHUNPEI