EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME

摘要

Provided is an epitaxial silicon wafer which has a polysilicon layer formed on the rear surface of a silicon crystal substrate doped with phosphorus (P) and germanium (Ge) and has excellent gettering performance. A silicon epitaxial layer is grown by means of a CVD method on the silicon crystal substrate doped with phosphorus and germanium with a high concentration, then, a PBS forming step wherein the polysilicon layer is grown on the rear surface of the silicon crystal substrate is performed. Thus, the number of LPDs generated on the surface of the epitaxial silicon wafer due to SF is significantly reduced.