| 摘要 |
PURPOSE: A method for forming the capacitor of a semiconductor device is provided to prevent bridge defects by effectively eliminating metal for a storage electrode which is remained on the upper side of a supporting layer. CONSTITUTION: An etch stopping layer(210) is formed on a semiconductor substrate(200). A molding layer(220) and a supporting layer(230) are formed on the etch stopping layer. A buffer layer is formed on the supporting layer by depositing an oxide layer. The supporting layer, the molding layer, and the etch stopping layer are patterned to form a storage node hole. The conductive layer(260) for forming a storage electrode is formed.
|
