发明名称 LITHOGRAPHY SIMULATION METHOD, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To easily execute accurate lithography simulation considering a best focus difference.SOLUTION: The lithography simulation method includes steps of: applying defocus processing to an image formation condition of lithography simulation by referring to a table with a relationship between the dimension of a mask pattern of a simulation object and a defocus amount specified therein; and calculating the dimension of a transfer pattern corresponding to the mask pattern using the image formation condition with the defocus processing applied thereto.
申请公布号 JP2011003644(A) 申请公布日期 2011.01.06
申请号 JP20090144202 申请日期 2009.06.17
申请人 TOSHIBA CORP 发明人 FUKUHARA KAZUYA;KOTANI TOSHIYA
分类号 H01L21/027;G03F1/36;G03F1/68 主分类号 H01L21/027
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