发明名称 |
LITHOGRAPHY SIMULATION METHOD, AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To easily execute accurate lithography simulation considering a best focus difference.SOLUTION: The lithography simulation method includes steps of: applying defocus processing to an image formation condition of lithography simulation by referring to a table with a relationship between the dimension of a mask pattern of a simulation object and a defocus amount specified therein; and calculating the dimension of a transfer pattern corresponding to the mask pattern using the image formation condition with the defocus processing applied thereto. |
申请公布号 |
JP2011003644(A) |
申请公布日期 |
2011.01.06 |
申请号 |
JP20090144202 |
申请日期 |
2009.06.17 |
申请人 |
TOSHIBA CORP |
发明人 |
FUKUHARA KAZUYA;KOTANI TOSHIYA |
分类号 |
H01L21/027;G03F1/36;G03F1/68 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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