| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having practical advantage of sufficient electromigration resistance and working speed.SOLUTION: A first insulating film 2 is formed on a semiconductor substrate 1, a wiring groove 3 is formed in the first insulating film 2, a first wiring 6 is formed by burying a metal film 5 in the wiring groove 3, a protection film 7 is formed on the first insulating film 2 and the first wiring 6, and a reaction layer 8 is formed on an interface between the first wiring 6 and the protective film 7. |
