发明名称 |
METHOD FOR TREATING SURFACE OF SOI SUBSTRATE |
摘要 |
A method for minimizing thickness variation of a substrate in an anneal step and achieving the smoothing of the surface of the substrate. Specifically provided is a method for treating the surface of a SOI substrate, including the steps of treating the surface of the SOI substrate by the PACE method using a plasma or the GCIB method using a gas cluster ion beam and subjecting the treated substrate to a heat treatment in argon atmosphere or an inert gas atmosphere containing 4 vol % or less of hydrogen so that the treated SOI substrate can be annealed.
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申请公布号 |
US2011003460(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20090864582 |
申请日期 |
2009.02.12 |
申请人 |
AKIYAMA SHOJI;KUBOTA YOSHIHIRO;ITO ATSUO;TANAKA KOUICHI;KAWAI MAKOTO;TOBISAKA YUJI;TAMURA HIROSHI |
发明人 |
AKIYAMA SHOJI;KUBOTA YOSHIHIRO;ITO ATSUO;TANAKA KOUICHI;KAWAI MAKOTO;TOBISAKA YUJI;TAMURA HIROSHI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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