<p>A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.</p>
申请公布号
WO2010110987(A3)
申请公布日期
2011.01.06
申请号
WO2010US25495
申请日期
2010.02.26
申请人
MICRON TECHNLOLOGY, INC.;SILLS, SCOTT;SANDHU, GURTEJ, S.