发明名称 |
OPERATION METHOD OF NONVOLATILE MEMORY DEVICE |
摘要 |
PURPOSE: An operation method of a nonvolatile memory device is provided to secure a stable read margin by performing a reading operation of a compensated voltage. CONSTITUTION: Data to be stored is inputted through an IO buffer unit(S601). A temperature data measured at a temperature information generator is stored(S603). A program operation is performed so that the data is stored in a memory cell(S605). A verification operation of a programmed cell is performed(S607). If the verification fails, a program voltage is increased according to ISPP(Increasing Step Pulse Program) mode(S609). |
申请公布号 |
KR20110001580(A) |
申请公布日期 |
2011.01.06 |
申请号 |
KR20090059156 |
申请日期 |
2009.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JEONG, BYOUNG KWAN;HAN, JUNG CHUL |
分类号 |
G11C16/34;G11C16/26 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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