发明名称 OPERATION METHOD OF NONVOLATILE MEMORY DEVICE
摘要 PURPOSE: An operation method of a nonvolatile memory device is provided to secure a stable read margin by performing a reading operation of a compensated voltage. CONSTITUTION: Data to be stored is inputted through an IO buffer unit(S601). A temperature data measured at a temperature information generator is stored(S603). A program operation is performed so that the data is stored in a memory cell(S605). A verification operation of a programmed cell is performed(S607). If the verification fails, a program voltage is increased according to ISPP(Increasing Step Pulse Program) mode(S609).
申请公布号 KR20110001580(A) 申请公布日期 2011.01.06
申请号 KR20090059156 申请日期 2009.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG, BYOUNG KWAN;HAN, JUNG CHUL
分类号 G11C16/34;G11C16/26 主分类号 G11C16/34
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