| 摘要 |
PURPOSE: A nonvolatile memory device programming method is provided to minimize the interference between the memory cells by programming a part of the multi-level cell in single level cell programming manner. CONSTITUTION: The nonvolatile memory device including multi-level cell blocks is prepared. The data inputted according to the program command is programmed in a part of the multi-level cell blocks in the single level cell program manner(S307). The data stored by generated multi-level cell program command is programmed over the whole multi-level cell block(S313). |
