APPRATUS AND METHOD FOR TREATING SUBSTRATE USING PLASMA

摘要

PURPOSE: An apparatus and a method for processing a plasma substrate are provided to increase a deposition speed of a coating layer formed on a substrate by supplying RF power to first and second electrodes. CONSTITUTION: A first electrode(110) and a second electrode(120) are arranged in a chamber to face each other. A first power source and a second power source supply RF power to the first and second electrodes. An electrode distance controller(170) controls the distance between the first electrode and the second electrode. A temperature controller is positioned on the lower side of the substrate inputted between the first and second electrodes.