| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer which is suitable for a semiconductor device which is made to be thin and has a reverse surface polished in a device post-process.SOLUTION: A method of manufacturing a silicon wafer includes a process S11 of preparing a silicon substrate 11, a first epitaxial process S13 of growing an n-type epitaxial film 12 on the silicon substrate 11, and a second epitaxial process S14 of growing a second epitaxial film 13 in which the device is formed on the epitaxial film 12. According to the method of manufacturing a silicon wafer, since the n-type first epitaxial film 12 formed under the second epitaxial film 13 in which the device is formed functions as a barrier layer, heavy metal introduced from the reverse-surface side of the silicon wafer in the device post-process never reaches a device region. |
