ETCHING COMPOSITION, IN PARTICULAR FOR STRAINED OR STRESSED SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSITION

摘要

The present invention provides a chromium-free etching composition suitable for treating various silicon-containing surfaces, including strained silicon on insulator surfaces as well as stressed silicon surfaces. The novel and inventive etching composition in accordance with the present invention includes hydrofluoric acid, nitric acid, acetic acid and an alkali iodide, preferably potassium iodide, present in an amount of 1 mmol/100 ml or more.