| 摘要 |
<p>The thermoelectric generator comprises a p- or n-doped semiconductor material, which is a ternary material of the substance class and is formed by combining two compounds of the substance class. The semiconductor material is binary or ternary alloy of the substance class, where no elements are specifically replaced. The p-type doping or n-type doping is achieved by selecting mixing ratios of the compounds or p-type doping is achieved by alkali metals and n-type doping is achieved by antimony, bismuth, selenium, tellurium, boron or iodine. The material contains 50 atomic% of silicon portion. Independent claims are included for: (1) a process for the production of a semiconductor material; (2) a method for producing and testing a semiconductor material for a thermoelectric generator; and (3) an array made of different semiconductor materials on a conductive substrate.</p> |
