| 摘要 |
A solid-state imaging device 1 is provided with (1) a photodetecting section 11 in which MxN of pixels are two-dimensionally arranged in M rows and N columns, and a pixel P m,n at the m-th row and the n-th column includes a photodiode PD1 m , n , (2) a row selecting section 20 that selects one or more rows, out of M rows of the photodetecting section 11, instructs each pixel in the selected rows to accumulate an electric charge generated in the photodiode PD1 m,n in response to the incidence of light, and instructs to output data corresponding to the amount of accumulated electric charge of each pixel by each row of the photodetecting section 11, and (3) a first signal processing section 30 that inputs data of each pixel, outputted by each row of the photodetecting section 11 by an instruction from the row selecting section 20, and outputs the data by each pixel. |
