发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
<p>The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6 , and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1 . The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6 . This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.</p> |
申请公布号 |
EP2270879(A1) |
申请公布日期 |
2011.01.05 |
申请号 |
EP20090724676 |
申请日期 |
2009.03.23 |
申请人 |
PANASONIC ELECTRIC WORKS CO., LTD;RIKEN |
发明人 |
TAKANO, TAKAYOSHI;TSUBAKI, KENJI;HIRAYAMA, HIDEKI;FUJIKAWA, SACHIE |
分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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