发明名称 |
Dünnschichtsolarzelle auf der Basis der Ib/IIIa/VIa-Verbindungshalbleiter mit Potentialbarriere innerhalb der Absorberschicht und Verfahren zum Herstellen einer solchen Solarzelle |
摘要 |
<p>A thin film solar cell, with an absorber structure comprising two overlying compound semiconductor phases (31, 32), an inter potential barrier and a p-conductive surface, is new. A thin film solar cell, based on Ib/IIIa/VIa compound semiconductors, has a photo-active polycrystalline absorber layer whi comprises a heterogeneous structure of two overlying Ib/IIIa/VIa phases (31, 32), an internal potential barrier and a p-conducti surface. An Independent claim is also included for production of the above thin film solar cell.</p> |
申请公布号 |
DE50016036(D1) |
申请公布日期 |
2011.01.05 |
申请号 |
DE2000516036 |
申请日期 |
2000.05.09 |
申请人 |
ODERSUN AG |
发明人 |
TOBER, OLAF;PENNDORF, JUERGEN DR.;WINKLER, MICHAEL DR.;JACOBS, KLAUS PROF. DR.;KOSCHACK, THOMAS DR. |
分类号 |
H01L31/032;H01L31/0336;H01L31/18 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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