Method for protecting e.g. semiconductor chip of fluoroscopy device from radiation, involves coating electric component with silicide layer, where layer thickness is selected such that radiation is dampened or completely absorbed

摘要

The method involves coating an electric component (12) with a silicide layer (13) of a layer thickness for radiation protection. The layer thickness is selected such that radiation (10) e.g. X-ray radiation and gamma radiation, impinging on the silicide layer is dampened or completely absorbed up to a preset radiation intensity when the radiation passes through the silicide layer. The silicide layer is structured, where silicide of the silicide layer contains metal elements. The radiation is generated by a medical imaging device.