DEVICE USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE,申请号EP20050821307-传众专利搜索

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发明名称	DEVICE USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE
摘要
申请公布号	EP1825519(A4)	申请公布日期	2011.01.05
申请号	EP20050821307	申请日期	2005.12.05
申请人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE	发明人	YOUN, DOO-HYEB;KIM, HYUN-TAK;CHAE, BYUNG-GYU;MAENG, SUNG-LYUL;KANG, KWANG-YONG
分类号	H01L49/00;H01L29/45	主分类号	H01L49/00
代理机构		代理人
主权项
地址

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