| 摘要 |
<p>A channel-etch thin film transistor having a source electrode including a source electrode primary portion and a source electrode lead portion and a drain electrode including a drain electrode primary portion and a drain electrode lead portion. At least one of the source electrode lead portion and the drain electrode lead portion has a side-contact portion in contact directly with a side wall of the active layer. An averaged width of the side-contact portion is narrower than an averaged width of corresponding one of the source electrode primary portion and the drain electrode primary portion.</p> |
