| 摘要 |
The method of nondestructive data reading from the ferroelectric memory cell supplied with the electrodes was developed. This method implies supply of reading electric voltage to the memory element electrodes with the view of generation of resilience in the ferroelectric memory cell and registration of the resilience by the field transistor with the floating gate and/or by the conductive channel made from the material with the piezoelectric properties, and according to the value of the current running through the transistor degree and character of ferroelectric cell polarization are identified. Ferroelectric memory element contains field transistor with extra piezoelement, being the memory cell. Floating gate is based on the piezoelectric material. The memory“ ”cell has three layer structure consisting of two electrodes, with the piezoelectric made from the ferroelectric material placed between the electrodes over the floating gate and transistor. Proposed method of information exchange thorough the acoustical channel allows to create fast method of information exchange not only between the memory cell and reading transistor but can become the base of the method of information exchange in the multiplayer schemes of microprocessors and/or between memory array and microprocessor.
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