发明名称 |
Method and resulting structure using silver for LCOS devices |
摘要 |
A method for fabricating an LCOS device. The method includes providing a semiconductor substrate and forming a plurality of MOS transistor devices formed on a portion of the semiconductor substrate. The method includes forming a first dielectric layer overlying the plurality of transistor devices and forming a first metal layer overlying the first dielectric layer. The method includes forming a second dielectric layer overlying the first metal layer and forming a plurality of pixel regions made substantially of silver bearing material overlying the second dielectric layer. In a preferred embodiment, the silver bearing material has much higher reflectivity for wavelengths of 450 nanometers and greater.
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申请公布号 |
US7863145(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20080234382 |
申请日期 |
2008.09.19 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
XIANG YANGHUI OLIVER;LU ENLIAN |
分类号 |
H01L21/8238;H01L21/331;H01L21/336;H01L21/76 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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