发明名称 |
Zirconium titanium oxide films |
摘要 |
Dielectric layers having an atomic layer deposited oxide containing titanium and zirconium and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a titanium-containing precursor onto a substrate, and pulsing a zirconium-containing precursor to form an oxide containing Zr and Ti by atomic layer deposition provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. A zirconium-containing precursor to form the oxide containing Zr and Ti can include zirconium tertiary-butoxide.
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申请公布号 |
US7863667(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20050212306 |
申请日期 |
2005.08.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L27/108;H01L21/28;H01L21/314;H01L21/316;H01L21/334;H01L29/51;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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