发明名称 |
Nonvolatile memory devices and methods of operating same to inhibit parasitic charge accumulation therein |
摘要 |
Methods of operating a charge trap nonvolatile memory device include operations to erase a first string of nonvolatile memory cells by selectively erasing a first plurality of nonvolatile memory cells in the first string and then selectively erasing a second plurality of nonvolatile memory cells in the first string, which may be interleaved with the first plurality of nonvolatile memory cells. This operation to selectively erase the first plurality of nonvolatile memory cells may include erasing the first plurality of nonvolatile memory cells while simultaneously biasing the second plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the second plurality of nonvolatile memory cells. The operation to selectively erase the second plurality of nonvolatile memory cells may include erasing the second plurality of nonvolatile memory cells while simultaneously biasing the first plurality of nonvolatile memory cells in a blocking condition that inhibits erasure of the first plurality of nonvolatile memory cells.
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申请公布号 |
US7864582(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20080191434 |
申请日期 |
2008.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;LIM YOUNG-HO;SUH KANG-DEOG |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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