发明名称 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same |
摘要 |
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
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申请公布号 |
US7863203(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20080019557 |
申请日期 |
2008.01.24 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
WANG ZIYUN;XU CHONGYING;BAUM THOMAS H. |
分类号 |
H01L21/31;C07F7/10;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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