发明名称 |
Semiconductor device, manufacturing method of the semiconductor device, and mounting method of the semiconductor device |
摘要 |
A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.
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申请公布号 |
US7863745(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20060595854 |
申请日期 |
2006.11.13 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
NOMOTO RYUJI;MATSUKI HIROHISA |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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