发明名称 Semiconductor device, manufacturing method of the semiconductor device, and mounting method of the semiconductor device
摘要 A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.
申请公布号 US7863745(B2) 申请公布日期 2011.01.04
申请号 US20060595854 申请日期 2006.11.13
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 NOMOTO RYUJI;MATSUKI HIROHISA
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
代理机构 代理人
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