发明名称 |
Semiconductor device and a method for manufacturing the same |
摘要 |
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
|
申请公布号 |
US7863619(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20090427139 |
申请日期 |
2009.04.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKEMURA YASUHIKO;TERAMOTO SATOSHI |
分类号 |
H01L29/10;H01L21/336;H01L21/77;H01L21/84;H01L27/13;H01L29/786 |
主分类号 |
H01L29/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|