发明名称 Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device
摘要 A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.
申请公布号 US7862965(B2) 申请公布日期 2011.01.04
申请号 US20070797529 申请日期 2007.05.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 AOYAMA HISAKO;KOBAYASHI YUJI
分类号 G03F9/00;G01N21/956;G01N23/225;G03C5/00;G03F1/84;H01L21/027 主分类号 G03F9/00
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