发明名称 |
Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device |
摘要 |
For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film. |
申请公布号 |
US7863135(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20100706668 |
申请日期 |
2010.02.16 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
SAKAI TAKESHI;ISHII YASUSHI;OKAZAKI TSUTOMU;NAKAMICHI MASARU;MATSUI TOSHIKAZU;NITTA KYOYA;MACHIDA SATORU;NAKAGAWA MUNEKATSU;TSUKADA YUICHI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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