发明名称 |
Fin field effect transistor and method for forming the same |
摘要 |
Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including a source/drain pair that is elevated with respect to the corresponding gate structure.
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申请公布号 |
US7863683(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20070714160 |
申请日期 |
2007.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KEUNNAM;YOSHIDA MAKOTO |
分类号 |
H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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